NEET PhysicsNCERT Class 12Electronic Devices

Semiconductor Electronics: Materials, Devices and Simple Circuits: NEET questions with solutions

NEET tests band gaps of metals, semiconductors and insulators, intrinsic carriers and the law of mass action nₑnₕ = nᵢ², n-type and p-type doping, how a p-n junction forms its depletion layer and barrier, forward and reverse bias, dynamic resistance from a V–I curve, diodes in simple circuits, and half-wave and full-wave rectification. Marks are lost by thinking doped crystals are charged, by taking static V/I for dynamic resistance, and by forgetting that a full-wave output ripples at twice the mains frequency.

Revise first: NCERT notes for Semiconductor Electronics: Materials, Devices and Simple Circuits

Questions

10 questions · answers after you pick

1A pure silicon crystal is doped with a small amount of arsenic, a group-15 element. What kind of semiconductor results, and what are its…Extrinsic semiconductorEasySingle correct 2Diamond (carbon), silicon and germanium all have the same crystal structure with four valence electrons per atom. Which ordering of their…Classification of metals, conductors and semiconductorsEasySingle correct 3A silicon sample at a temperature where nᵢ = 2.4 × 10¹⁹ m⁻³ is doped with donors at a concentration of 4.0 × 10²² m⁻³. Taking every donor as…Extrinsic semiconductorMediumSingle correct 4A full-wave rectifier built from two diodes and a centre-tapped transformer is fed from a 60 Hz AC supply. What is the fundamental frequency…Application of junction diode as a rectifierEasySingle correct 5A silicon p-n junction with built-in barrier V₀ is studied first unbiased, then with an external voltage V in forward bias and in reverse…Semiconductor diodeMediumStatement based 6In a forward-biased silicon diode, the current rises from 10 mA to 20 mA when the voltage across it is increased from 0.70 V to 0.75 V. What…Semiconductor diodeMediumSingle correct 7A 5.0 V battery feeds two parallel branches. Each branch is a 1.0 kΩ resistor in series with an identical silicon diode (forward drop 0.7…Semiconductor diodeHardSingle correct 8A silicon wafer (nᵢ = 1.5 × 10¹⁶ m⁻³) is doped with indium, a group-13 element, at a concentration of 2.5 × 10²² m⁻³. Taking every dopant…Extrinsic semiconductorHardSingle correct 9Match each element in List I with its role or property in List II.Intrinsic semiconductorMediumMatch the following 10A strip of pure silicon is warmed from room temperature to 100 °C while its resistance is monitored, and the resistance drops. Read the…Intrinsic semiconductorMediumAssertion–Reason

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